2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter 2SB1215 features low collector-to-emitter saturation voltage. excllent linearity of hfe. high ft. fast switching time. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -100 v emitter-base voltage v ebo -6 v collector current i c -3 a collector current (pulse) i cp -6 a collector dissipation 1 w t c =25 20 w jumction temperature t j 150 storage temperature t stg -55to+150 p c product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = -100v , i e =0 -1 a emitter cutoff current i ebo v eb =-4v,i c =0 -1 a v ce =-5v,i c = -0.5a 70 400 v ce =-5v,i c = -2a 40 gain bandwidth product f t v ce = -10v , i c = -0.5a 130 mhz output capacitance c ob v cb = -10v , f = 1mhz 40 pf collector-emitter saturation voltage v ce(sat) i c = -1.5a , i b = -0.15a -200 -500 mv base-to-emitter saturation voltage v be(sat) i c = -1.5a , i b = -0.15a -0.9 -1.2 v collector-to-base breakdown voltage v (br)cbo i c = -10a , i e = 0 -120 v collector-to-emitter breakdown voltage v (br)ceo i c =-1ma,r be = -100 v emitter-to-base breakdown voltage v (br)ebo i e = -10a , i c =0 -6 v turn-on time t on 100 ns storage time t stg 800 ns fall time t f 50 ns dc current gain h fe h fe classification rank q r s t hfe 70 140 100 200 140 280 200 400 2SB1215 product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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